All MOSFET. AON6260 Datasheet

 

AON6260 Datasheet and Replacement


   Type Designator: AON6260
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 1390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: DFN5X6
 

 AON6260 substitution

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AON6260 Datasheet (PDF)

 ..1. Size:262K  aosemi
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AON6260

AON626060V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6260 uses trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.1. Size:334K  1
 aon6262e.pdf pdf_icon

AON6260

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:334K  aosemi
 aon6262e.pdf pdf_icon

AON6260

AON6262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:368K  aosemi
 aon6266.pdf pdf_icon

AON6260

AON626660V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AON6234 , AON6236 , AON6240 , AON6242 , AON6244 , AON6246 , AON6248 , AON6250 , IRFP260N , AON6266 , AON6270 , AON6278 , AON6280 , AON6282 , AON6284 , AON6290 , AON6292 .

Keywords - AON6260 MOSFET datasheet

 AON6260 cross reference
 AON6260 equivalent finder
 AON6260 lookup
 AON6260 substitution
 AON6260 replacement

 

 
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