AON6260 MOSFET Datasheet: N-Ch, 60V, 85A. Full specification with pinout and replacement list

AON6260 Specs and Replacement

Type Designator: AON6260

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 1390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: DFN5X6

AON6260 substitution

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AON6260 datasheet

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AON6260 60V N-Channel MOSFET General Description Product Summary VDS The AON6260 uses trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 85A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:334K aosemi
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AON6262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 40A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6266 60V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS MV) technology 60V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒