AON6411 Datasheet: MOSFET, P-Ch, 20V, 85A. Full specification with pinout and replacement list

AON6411 Datasheet. Specs and Replacement

Type Designator: AON6411 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1910 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: DFN5X6

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AON6411 datasheet

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AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒

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AON6414AL 30V N-Channel MOSFET General Description Product Summary VDS The AON6414AL uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and ... See More ⇒

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AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒