AON6411
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6411
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 156
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 100
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 1910
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021
Ohm
Package:
DFN5X6
AON6411
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6411
Datasheet (PDF)
..1. Size:262K 1
aon6411.pdf 
AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
..2. Size:262K aosemi
aon6411.pdf
AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
8.1. Size:265K 1
aon6414al.pdf
AON6414AL30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6414AL uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V)50Asuitable for use as a high side switch in SMPS and
8.2. Size:384K aosemi
aon6414al.pdf
AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
8.3. Size:268K aosemi
aon6414a.pdf
AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
8.4. Size:158K aosemi
aon6410.pdf
AON641030V N-Channel MOSFETGeneral Description Product SummaryThe AON6410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 24A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)
8.5. Size:156K aosemi
aon6414.pdf
AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
8.6. Size:268K aosemi
aon6416.pdf
AON641630V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS30VThe AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
8.7. Size:306K aosemi
aon6418.pdf
AON641830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
8.8. Size:278K aosemi
aon6413.pdf
AON641330V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V)
Datasheet: WPB4002
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