AON6413 MOSFET PDF: P-Ch, 30V, 32A. Full specification with pinout and replacement list

..1. Size:278K aosemi
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AON6413 30V P-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

8.1. Size:265K 1
aon6414al.pdf pdf_icon

AON6414AL 30V N-Channel MOSFET General Description Product Summary VDS The AON6414AL uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and ... See More ⇒

8.2. Size:262K 1
aon6411.pdf pdf_icon

AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒

8.3. Size:384K aosemi
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AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒

8.4. Size:268K aosemi
aon6414a.pdf pdf_icon

AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒

8.5. Size:158K aosemi
aon6410.pdf pdf_icon

AON6410 30V N-Channel MOSFET General Description Product Summary The AON6410 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 24A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON) ... See More ⇒

8.6. Size:156K aosemi
aon6414.pdf pdf_icon

AON6414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒

8.7. Size:268K aosemi
aon6416.pdf pdf_icon

AON6416 30V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 30V The AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) ... See More ⇒

8.8. Size:306K aosemi
aon6418.pdf pdf_icon

AON6418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.9. Size:262K aosemi
aon6411.pdf pdf_icon

AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) ... See More ⇒