AON6512 Datasheet and Replacement
Type Designator: AON6512
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 1327 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: DFN5X6
AON6512 substitution
AON6512 Datasheet (PDF)
aon6512.pdf
AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
aon6512.pdf
AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
aon6510.pdf
AON651030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aon6518.pdf
AON651830V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6484 , AON6486 , AON6500 , AON6502 , AON6504 , AON6506 , AON6508 , AON6510 , 20N50 , AON6516 , AON6518 , AON6520 , AON6522 , AON6524 , AON6526 , AON6530 , AON6532 .
History: BL80N20L-W | CEB540N | RFL2N05 | HGP080N08SL | HGN052N10SL | AUIRL3705N | IRFS9233
Keywords - AON6512 MOSFET datasheet
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History: BL80N20L-W | CEB540N | RFL2N05 | HGP080N08SL | HGN052N10SL | AUIRL3705N | IRFS9233
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