AON6516 Datasheet and Replacement
Type Designator: AON6516
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 526 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: DFN5X6
AON6516 substitution
AON6516 Datasheet (PDF)
aon6516.pdf

AON651630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aon6512.pdf

AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
aon6512.pdf

AON651230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V)
aon6510.pdf

AON651030V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6486 , AON6500 , AON6502 , AON6504 , AON6506 , AON6508 , AON6510 , AON6512 , IRF1407 , AON6518 , AON6520 , AON6522 , AON6524 , AON6526 , AON6530 , AON6532 , AON6536 .
History: IRF7477PBF | SSF2341E | STD35NF3LLT4 | IXTT140N10P | ME2306A-G | PF608BA | 2SK2196
Keywords - AON6516 MOSFET datasheet
AON6516 cross reference
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History: IRF7477PBF | SSF2341E | STD35NF3LLT4 | IXTT140N10P | ME2306A-G | PF608BA | 2SK2196



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