AON6552 PDF and Equivalents Search

 

AON6552 Specs and Replacement

Type Designator: AON6552

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 441 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: DFN5X6

AON6552 substitution

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AON6552 datasheet

 ..1. Size:302K  aosemi
aon6552.pdf pdf_icon

AON6552

AON6552 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:301K  aosemi
aon6558.pdf pdf_icon

AON6552

AON6558 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:441K  aosemi
aon6554.pdf pdf_icon

AON6552

AON6554 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:282K  1
aon6512.pdf pdf_icon

AON6552

AON6512 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON6522, AON6524, AON6526, AON6530, AON6532, AON6536, AON6538, AON6544, SI2302, AON6554, AON6558, AON6566, AON6572, AON6576, AON6586, AON6588, AON6594

Keywords - AON6552 MOSFET specs

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