AON6594 PDF and Equivalents Search

 

AON6594 Specs and Replacement

Type Designator: AON6594

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.3 nS

Cossⓘ - Output Capacitance: 441 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN5X6

AON6594 substitution

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AON6594 datasheet

 ..1. Size:358K  aosemi
aon6594.pdf pdf_icon

AON6594

AON6594 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:355K  aosemi
aon6590a.pdf pdf_icon

AON6594

AON6590A 40V N-Channel MOSFET General Description Product Summary VDS 40V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 300A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:340K  aosemi
aon6596.pdf pdf_icon

AON6594

AON6596 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:217K  aosemi
aon6590.pdf pdf_icon

AON6594

AON6590 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON6552, AON6554, AON6558, AON6566, AON6572, AON6576, AON6586, AON6588, 2N60, AON6596, AON6752, AON6754, AON6756, AON6758, AON6760, AON6774, AON6780

Keywords - AON6594 MOSFET specs

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