All MOSFET. AON6594 Datasheet

 

AON6594 Datasheet and Replacement


   Type Designator: AON6594
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 441 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5X6
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AON6594 Datasheet (PDF)

 ..1. Size:358K  aosemi
 aon6594.pdf pdf_icon

AON6594

AON659430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:355K  aosemi
 aon6590a.pdf pdf_icon

AON6594

AON6590A40V N-Channel MOSFETGeneral Description Product SummaryVDS40V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 300A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:340K  aosemi
 aon6596.pdf pdf_icon

AON6594

AON659630V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:217K  aosemi
 aon6590.pdf pdf_icon

AON6594

AON659040V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)

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History: FDMS9620S | IRFI7536G | WMM11N80M3 | IXTH4N150

Keywords - AON6594 MOSFET datasheet

 AON6594 cross reference
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