AON6596
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6596
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 41
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 2
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
DFN5X6
AON6596
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6596
Datasheet (PDF)
..1. Size:340K aosemi
aon6596.pdf 
AON659630V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:355K aosemi
aon6590a.pdf
AON6590A40V N-Channel MOSFETGeneral Description Product SummaryVDS40V Trench Power MV MOSFET technology Low RDS(ON) ID (at VGS=10V) 300A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:358K aosemi
aon6594.pdf
AON659430V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power AlphaMOS (MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 35A Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:217K aosemi
aon6590.pdf
AON659040V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 100A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC
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