AON6934A Datasheet and Replacement
Type Designator: AON6934A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31(33) W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id| ⓘ - Maximum Drain Current: 28(36) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.3(4) nS
Cossⓘ - Output Capacitance: 441(898) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052(0.0029) Ohm
Package: DFN5X6B
AON6934A Datasheet (PDF)
aon6934a.pdf

AON6934A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)
aon6934.pdf

AON693430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)
aon6936.pdf

AON693630V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V)
aon6938.pdf

AON693830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V)
Datasheet: AON6912A , AON6918 , AON6920 , AON6922 , AON6924 , AON6926 , AON6928 , AON6932A , IRFZ44N , AON6936 , AON6938 , AON6946 , AON6970 , AON6973A , AON6974A , AON6978 , AON6980 .
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