AON6980 Specs and Replacement
Type Designator: AON6980
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 23.5(32) W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V
|Id| ⓘ - Maximum Drain Current: 28(36) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.2(3) nS
Cossⓘ -
Output Capacitance: 270(515) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068(0.0038) Ohm
Package: DFN5X6B
- MOSFET ⓘ Cross-Reference Search
AON6980 datasheet
..1. Size:481K aosemi
aon6980.pdf 
AON6980 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power AlphaMOS ( MOS LV) technology Low RDS(ON) ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
8.1. Size:350K aosemi
aon6984.pdf
AON6984 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
8.2. Size:353K aosemi
aon6982.pdf
AON6982 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.1. Size:350K aosemi
aon6998.pdf
AON6998 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.2. Size:476K aosemi
aon6978.pdf
AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.4. Size:705K aosemi
aon6936.pdf
AON6936 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.5. Size:529K aosemi
aon6970.pdf
AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.6. Size:648K aosemi
aon6974.pdf
AON6974 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.7. Size:520K aosemi
aon6934.pdf
AON6934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.8. Size:487K aosemi
aon6946.pdf
AON6946 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5V VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.9. Size:369K aosemi
aon6926.pdf
AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 Q1 The AON6926 is designed to provide a high efficiency 30V synchronous buck power stage with optimal layout and VDS 30V board space utilization. It includes two specialized 50A ID (at VGS=10V) 44A MOSFETs in a dual Power DFN5x6A package. The Q1 ... See More ⇒
9.10. Size:394K aosemi
aon6918.pdf
AON6918 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6918 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒
9.11. Size:490K aosemi
aon6996.pdf
AON6996 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 60A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.12. Size:387K aosemi
aon6922.pdf
AON6922 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6922 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 71A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒
9.13. Size:551K aosemi
aon6938.pdf
AON6938 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.14. Size:353K aosemi
aon6992.pdf
AON6992 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.15. Size:394K aosemi
aon6920.pdf
AON6920 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6920 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒
9.16. Size:482K aosemi
aon6973a.pdf
AON6973A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.17. Size:482K aosemi
aon6974a.pdf
AON6974A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.18. Size:431K aosemi
aon6908a.pdf
AON6908A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6 package. The Q1 "High RDS(ON) (at VGS=10V) ... See More ⇒
9.19. Size:545K aosemi
aon6912a.pdf
AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒
9.20. Size:349K aosemi
aon6994.pdf
AON6994 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.21. Size:562K aosemi
aon6906.pdf
AON6906 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906 is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is ... See More ⇒
9.22. Size:566K aosemi
aon6912.pdf
AON6912 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒
9.23. Size:471K aosemi
aon6908.pdf
AON6908 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒
9.24. Size:503K aosemi
aon6932.pdf
AON6932 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.25. Size:424K aosemi
aon6910a.pdf
AON6910A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6910A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V) 37A Power DFN5x6B package. The Q1 "High Side" MOSFET is ... See More ⇒
9.26. Size:616K aosemi
aon6932a.pdf
AON6932A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.27. Size:601K aosemi
aon6928.pdf
AON6928 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 36A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
9.28. Size:370K aosemi
aon6906a.pdf
AON6906A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is ... See More ⇒
9.29. Size:633K aosemi
aon6934a.pdf
AON6934A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒
Detailed specifications: AON6934A, AON6936, AON6938, AON6946, AON6970, AON6973A, AON6974A, AON6978, IRFP460, AON7200, AON7210, AON7220, AON7240, AON7242, AON7244, AON7246, AON7254
Keywords - AON6980 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
