AON6980 - аналоги, параметры транзистора - Справочник транзисторов

Аналоги AON6980. Основные параметры

   Наименование производителя: AON6980
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 23.5(32) W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20(12) V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 28(36) A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15.2(3) ns
   Cossⓘ - Выходная емкость: 270(515) pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0068(0.0038) Ohm
   Тип корпуса: DFN5X6B

Аналог (замена) для AON6980

- подбор ⓘ MOSFET транзистора по параметрам

AON6980 даташит

..1. Size:481K aosemi
aon6980.pdf pdf_icon

AON6980 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power AlphaMOS ( MOS LV) technology Low RDS(ON) ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

8.1. Size:350K aosemi
aon6984.pdf pdf_icon

AON6984 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)

8.2. Size:353K aosemi
aon6982.pdf pdf_icon

AON6982 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V)

9.1. Size:350K aosemi
aon6998.pdf pdf_icon

AON6998 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)

9.2. Size:476K aosemi
aon6978.pdf pdf_icon

AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

9.3. Size:434K aosemi
aon6924.pdf pdf_icon

9.4. Size:705K aosemi
aon6936.pdf pdf_icon

AON6936 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 32A 44A High Current Capability RDS(ON) (at VGS=10V)

9.5. Size:529K aosemi
aon6970.pdf pdf_icon

AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)

9.6. Size:648K aosemi
aon6974.pdf pdf_icon

AON6974 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

9.7. Size:520K aosemi
aon6934.pdf pdf_icon

AON6934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)

9.8. Size:487K aosemi
aon6946.pdf pdf_icon

AON6946 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5V VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

9.9. Size:369K aosemi
aon6926.pdf pdf_icon

AON6926 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 Q1 The AON6926 is designed to provide a high efficiency 30V synchronous buck power stage with optimal layout and VDS 30V board space utilization. It includes two specialized 50A ID (at VGS=10V) 44A MOSFETs in a dual Power DFN5x6A package. The Q1

9.10. Size:394K aosemi
aon6918.pdf pdf_icon

AON6918 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6918 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

9.11. Size:490K aosemi
aon6996.pdf pdf_icon

AON6996 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 60A Low Gate Charge RDS(ON) (at VGS=10V)

9.12. Size:387K aosemi
aon6922.pdf pdf_icon

AON6922 25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6922 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 25V 25V board space utilization. It includes two specialized ID (at VGS=10V) 71A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

9.13. Size:551K aosemi
aon6938.pdf pdf_icon

AON6938 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 42A High Current Capability RDS(ON) (at VGS=10V)

9.14. Size:353K aosemi
aon6992.pdf pdf_icon

AON6992 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 85A Low Gate Charge RDS(ON) (at VGS=10V)

9.15. Size:394K aosemi
aon6920.pdf pdf_icon

AON6920 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6920 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 60A 85A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

9.16. Size:482K aosemi
aon6973a.pdf pdf_icon

AON6973A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)

9.17. Size:482K aosemi
aon6974a.pdf pdf_icon

AON6974A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) on Low-Side VDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)

9.18. Size:431K aosemi
aon6908a.pdf pdf_icon

AON6908A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6 package. The Q1 "High RDS(ON) (at VGS=10V)

9.19. Size:545K aosemi
aon6912a.pdf pdf_icon

AON6912A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912A is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6 package. The Q1 RDS(ON) (at VGS=10V)

9.20. Size:349K aosemi
aon6994.pdf pdf_icon

AON6994 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 VDS 30V 30V Trench Power MOS Technology Low RDS(ON) ID (at VGS=10V) 50A 82A Low Gate Charge RDS(ON) (at VGS=10V)

9.21. Size:562K aosemi
aon6906.pdf pdf_icon

AON6906 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906 is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is

9.22. Size:566K aosemi
aon6912.pdf pdf_icon

AON6912 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6912 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 34A 52A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

9.23. Size:471K aosemi
aon6908.pdf pdf_icon

AON6908 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON6908 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 46A 80A MOSFETs in a dual Power DFN5x6A package. The Q1 RDS(ON) (at VGS=10V)

9.24. Size:503K aosemi
aon6932.pdf pdf_icon

AON6932 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)

9.25. Size:424K aosemi
aon6910a.pdf pdf_icon

AON6910A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6910A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 80A ID (at VGS=10V) 37A Power DFN5x6B package. The Q1 "High Side" MOSFET is

9.26. Size:616K aosemi
aon6932a.pdf pdf_icon

AON6932A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 42A High Current Capability RDS(ON) (at VGS=10V)

9.27. Size:601K aosemi
aon6928.pdf pdf_icon

AON6928 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 30A 36A High Current Capability RDS(ON) (at VGS=10V)

9.28. Size:370K aosemi
aon6906a.pdf pdf_icon

AON6906A 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 The AON6906A is designed to provide a high efficiency Q1 synchronous buck power stage with optimal layout and board VDS 30V 30V space utilization.It includes two specialized MOSFETs in a dual 48A ID (at VGS=10V) 37A Power DFN5x6A package. The Q1 "High Side" MOSFET is

9.29. Size:633K aosemi
aon6934a.pdf pdf_icon

AON6934A 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 28A 36A High Current Capability RDS(ON) (at VGS=10V)

Другие MOSFET... AON6934A , AON6936 , AON6938 , AON6946 , AON6970 , AON6973A , AON6974A , AON6978 , IRFP460 , AON7200 , AON7210 , AON7220 , AON7240 , AON7242 , AON7244 , AON7246 , AON7254 .