AON7200 Datasheet and Replacement
Type Designator: AON7200
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 2
nS
Cossⓘ -
Output Capacitance: 490
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
DFN3X3EP
- MOSFET Cross-Reference Search
AON7200 Datasheet (PDF)
..1. Size:221K aosemi
aon7200.pdf 
AON7200 30V N-Channel MOSFET General Description Product SummaryVDS30VThe AON7200 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 40Afrequency switching performance. Conduction and RDS(ON) (at VGS=10V)
8.1. Size:229K aosemi
aon7202.pdf
AON720230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7202 uses Trench MOSFET technology thatis uniquely optimized to provide the most efficient high ID (at VGS=10V) 40Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)
9.1. Size:348K 1
aon7264e.pdf
AON7264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:500K 1
aon7254.pdf
AON7254150V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 150V Very Low RDS(ON) ID (at VGS=10V) 17A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:575K 1
aon7262e.pdf
AON7262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:263K 1
aon7296.pdf
AON7296100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7296 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.5. Size:461K 1
aon7244.pdf
AON724460V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON7244 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 50Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
9.6. Size:330K aosemi
aon7232.pdf
AON7232100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET Technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)
9.7. Size:348K aosemi
aon7264e.pdf
AON7264ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 28A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:270K aosemi
aon7254.pdf
AON7254150V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 150V Very Low RDS(ON) ID (at VGS=10V) 17A Low Gate Charge RDS(ON) (at VGS=10V)
9.9. Size:276K aosemi
aon7242.pdf
AON724240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON7242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.10. Size:337K aosemi
aon7262e.pdf
AON7262ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.11. Size:272K aosemi
aon7246.pdf
AON724660V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON7246 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 34.5Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
9.12. Size:388K aosemi
aon7220.pdf
AON722025V N-Channel MOSFETGeneral Description Product SummaryVDS25VThe AON7220 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.13. Size:563K aosemi
aon7264c.pdf
AON7264CTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.14. Size:270K aosemi
aon7280.pdf
AON728080V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7280 uses trench MOSFET technology that is 80Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.15. Size:239K aosemi
aon7210.pdf
AON721030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON7210 uses trench MOSFET technology that is 30V50Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are
9.16. Size:151K aosemi
aon7240.pdf
AON724040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON7240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 40Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.17. Size:332K aosemi
aon7230.pdf
AON7230100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)
9.18. Size:267K aosemi
aon7290.pdf
AON7290100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7290 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 50Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.19. Size:263K aosemi
aon7296.pdf
AON7296100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AON7296 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.20. Size:277K aosemi
aon7244.pdf
AON724460V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON7244 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 50Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
9.21. Size:343K aosemi
aon7246e.pdf
AON7246ETM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.22. Size:259K aosemi
aon7292.pdf
AON7292100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 23A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
History: VBNC1303
Keywords - AON7200 MOSFET datasheet
AON7200 cross reference
AON7200 equivalent finder
AON7200 lookup
AON7200 substitution
AON7200 replacement
