AON7200. Аналоги и основные параметры
Наименование производителя: AON7200
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 62 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 2 ns
Cossⓘ - Выходная емкость: 490 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: DFN3X3EP
Аналог (замена) для AON7200
- подборⓘ MOSFET транзистора по параметрам
AON7200 даташит
..1. Size:221K aosemi
aon7200.pdf 
AON7200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance. Conduction and RDS(ON) (at VGS=10V)
8.1. Size:229K aosemi
aon7202.pdf 
AON7202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)
9.3. Size:575K 1
aon7262e.pdf 
AON7262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:263K 1
aon7296.pdf 
AON7296 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7296 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.5. Size:461K 1
aon7244.pdf 
AON7244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7244 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 50A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
9.6. Size:330K aosemi
aon7232.pdf 
AON7232 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET Technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)
9.9. Size:276K aosemi
aon7242.pdf 
AON7242 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.10. Size:337K aosemi
aon7262e.pdf 
AON7262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.11. Size:272K aosemi
aon7246.pdf 
AON7246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7246 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 34.5A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
9.12. Size:388K aosemi
aon7220.pdf 
AON7220 25V N-Channel MOSFET General Description Product Summary VDS 25V The AON7220 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.13. Size:563K aosemi
aon7264c.pdf 
AON7264C TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
9.14. Size:270K aosemi
aon7280.pdf 
AON7280 80V N-Channel MOSFET General Description Product Summary VDS The AON7280 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.15. Size:239K aosemi
aon7210.pdf 
AON7210 30V N-Channel MOSFET General Description Product Summary VDS The AON7210 uses trench MOSFET technology that is 30V 50A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are
9.16. Size:151K aosemi
aon7240.pdf 
AON7240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.17. Size:332K aosemi
aon7230.pdf 
AON7230 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)
9.18. Size:267K aosemi
aon7290.pdf 
AON7290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.19. Size:263K aosemi
aon7296.pdf 
AON7296 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7296 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.20. Size:277K aosemi
aon7244.pdf 
AON7244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7244 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 50A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
9.21. Size:343K aosemi
aon7246e.pdf 
AON7246E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)
Другие IGBT... AON6936, AON6938, AON6946, AON6970, AON6973A, AON6974A, AON6978, AON6980, IRFZ44, AON7210, AON7220, AON7240, AON7242, AON7244, AON7246, AON7254, AON7280
