AON7432 Datasheet. Specs and Replacement
Type Designator: AON7432 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 98 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: DFN3X3EP
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AON7432 substitution
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AON7432 datasheet
aon7432.pdf
AON7432 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7432 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 18A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
aon7436.pdf
AON7436 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON7436 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 23A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) ... See More ⇒
aon7430l.pdf
AON7430L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and (VGS = 10V) ID = 20A general purpose applications. (VGS = 10V) RDS(ON) ... See More ⇒
aon7430.pdf
AON7430 30V N-Channel MOSFET General Description Features The AON7430 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and ID = 34A (VGS = 10V) general purpose applications. RDS(ON) ... See More ⇒
Detailed specifications: AON7418, AON7421, AON7422E, AON7423, AON7424, AON7426, AON7428, AON7430, AON6380, AON7436, AON7440, AON7444, AON7446, AON7448, AON7450, AON7452, AON7458
Keywords - AON7432 MOSFET specs
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