HAT2045T MOSFET Datasheet: N-Ch, 28V, 6A. Full specification with pinout and replacement list

HAT2045T Specs and Replacement

Type Designator: HAT2045T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 680 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TSOP8

HAT2045T substitution

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HAT2045T datasheet

..1. Size:27K hitachi
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HAT2045T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-773D (Z) Target Specification 5th. Edition Mar. 2001 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP 8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 D S S S S 2, 3, 6, 7 Sou 2 3 6 7 4, 5 G MOS2 MOS1 HAT2045T Absolute ... See More ⇒

8.1. Size:75K renesas
rej03g1168 hat2040rds.pdf pdf_icon

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

8.2. Size:102K renesas
rej03g1170 hat2044rds.pdf pdf_icon

8.3. Size:50K hitachi
hat2042t.pdf pdf_icon

HAT2042T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-669F (Z) 7th. Edition Feb. 1999 Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP 8 5 6 87 4 123 8 1 D D 4 5 G G 1, 8 Drain S S S S 2, 3, 6, 7 Source 2 3 6 7 4, 5 Gate MOS2 MOS1 HAT2042T Absolute Maximum Rat... See More ⇒