HAT2045T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HAT2045T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 680 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: TSOP8
HAT2045T Datasheet (PDF)
hat2045t.pdf
HAT2045TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-773D (Z)Target Specification5th. EditionMar. 2001Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DS SS S2, 3, 6, 7 Sou2 3 674, 5 GMOS2MOS1HAT2045TAbsolute
rej03g1168 hat2040rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1170 hat2044rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hat2042t.pdf
HAT2042TSilicon N Channel Power MOS FETHigh Speed Power Switching ADE-208-669F (Z)7th. EditionFeb. 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP85687412381DD4 5GG1, 8 DrainS SS S2, 3, 6, 7 Source2 3 674, 5 GateMOS2MOS1HAT2042TAbsolute Maximum Rat
hat2043r.pdf
HAT2043RSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-668D (Z)5th. EditionFebruary 1999Features Low on-resistance Capable of 4 V gate drive Low drive current High density mountingOutlineSOP8567843217 85 6D DD D42GG1, 3 Source2, 4 Gate5, 6, 7, 8 DrainS 3S1MOS2MOS1HAT2043RAbsolute Maximum
hat2049t.pdf
HAT2049TSilicon N Channel Power MOS FETHigh Speed Power SwitchingADE-208-723 (Z)1st. EditionFebruary 1999Features Low on-resistance Capable of 2.5 V gate drive Low drive current High density mountingOutlineTSSOP8568741231 5 8D D D4G1, 5, 8 Drain2, 3, 6, 7 Source4 GateS S S S2 3 76HAT2049TAbsolute Maximum Ratings (Ta = 25
Другие MOSFET... HAT2031T , HAT2036R , HAT2037T , HAT2039R , HAT2040R , HAT2042T , HAT2043R , HAT2044R , IRF840 , HAT2046R , HAT2049T , HAT2050T , HAT2051T , HAT2052T , HAT2053M , HAT2054M , HAT2058R .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918