AON7502 MOSFET. Datasheet pdf. Equivalent

   Type Designator: AON7502
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 574 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: DFN3X3EP

AON7502 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON7502 Datasheet (PDF)

..1. Size:273K aosemi
aon7502.pdf

AON750230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 6VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

8.1. Size:547K 1
aon7508.pdf

AON750830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)

8.2. Size:324K 1
aon7506.pdf

AON750630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V)

8.3. Size:315K aosemi
aon7508.pdf