AON7506 MOSFET Datasheet: N-Ch, 30V, 12A. Full specification with pinout and replacement list

AON7506 Specs and Replacement

The AON7506 is an N-channel enhancement-mode MOSFET designed for high-efficiency power switching applications. It features low on-state resistance and fast switching performance, making it suitable for use in DC-DC converters, load switching, power management circuits, battery-powered systems. The device is optimized for low gate charge to reduce switching losses and improve overall system efficiency. Housed in a compact surface-mount package, the AON7506 supports high current handling with good thermal performance, enabling reliable operation in space-constrained and high-density designs.

Type Designator: AON7506

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 233 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: DFN3X3EP

AON7506 substitution

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AON7506 datasheet

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AON7506 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON7508 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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