All MOSFET. AON7524 Datasheet

 

AON7524 MOSFET. Datasheet pdf. Equivalent

Type Designator: AON7524

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 32 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 3 nS

Drain-Source Capacitance (Cd): 800 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0033 Ohm

Package: DFN3x3EP

AON7524 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON7524 Datasheet (PDF)

1.1. aon7524.pdf Size:263K _aosemi

AON7524
AON7524

AON7524 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 30V • Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 28A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.3mΩ • ESD protection RDS(ON) (at VGS=4.5V) < 4mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=2.5V) < 5.8mΩ Typical ESD protection HBM C

4.1. aon7522e.pdf Size:270K _aosemi

AON7524
AON7524

AON7522E 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 30V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 34A • Low Gate Charge RDS(ON) (at VGS=10V) < 4mΩ • ESD protection RDS(ON) (at VGS = 4.5V) < 6.8mΩ • RoHS and Halogen-Free Compliant Typical ESD protection HBM Class 2 Application 100% UIS Test

4.2. aon7528.pdf Size:320K _aosemi

AON7524
AON7524

AON7528 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS LV) technology 30V • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A • Low Gate Charge RDS(ON) (at VGS=10V) < 2mΩ • ESD protection RDS(ON) (at VGS = 4.5V) < 3.4mΩ • RoHS and Halogen-Free Compliant Typical ESD protection HBM Class 2 Application 100% UIS Teste

4.3. aon7520.pdf Size:267K _aosemi

AON7524
AON7524

AON7520 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS ID (at VGS=10V) 50A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.8mΩ • ESD protection RDS(ON) (at VGS=4.5V) < 2.1mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=2.5V) < 3.1mΩ Typical ESD protection HB

Datasheet: AON7474A , AON7502 , AON7506 , AON7508 , AON7510 , AON7516 , AON7520 , AON7522E , IRF5210 , AON7528 , AON7530 , AON7532E , AON7534 , AON7536 , AON7538 , AON7544 , AON7548 .

 


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