AON7532E MOSFET Datasheet: N-Ch, 30V, 28A. Full specification with pinout and replacement list

AON7532E Specs and Replacement

Type Designator: AON7532E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: DFN3X3EP

AON7532E substitution

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AON7532E datasheet

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AON7532E 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON7534 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:261K aosemi
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AON7536 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.3. Size:269K aosemi
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AON7530 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒