AON7934 MOSFET PDF: NN-Ch, 30V, 16(18)A. Full specification with pinout and replacement list

AON7934 PDF Specs and Replacement

   Type Designator: AON7934
   Type of Transistor: MOSFET
   Type of Control Channel: NN -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 23(25) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16(18) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 2.8(3.3) nS
   Cossⓘ - Output Capacitance: 235(314) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0102(0.0077) Ohm
   Package: DFN3X3AEP2

AON7934 substitution

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AON7934 PDF Specs

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AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

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AON7932 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON7932 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 26A 35A MOSFETs in a dual Power DFN3x3A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒

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AON7902 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON7902 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 27A 40A MOSFETs in a dual Power DFN3.3x3.3A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒