All MOSFET. AOT11S65 Datasheet

 

AOT11S65 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT11S65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 198 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 42 pF

Maximum Drain-Source On-State Resistance (Rds): 0.399 Ohm

Package: TO-220

AOT11S65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT11S65 Datasheet (PDF)

1.1. aot11s65l.pdf Size:300K _aosemi

AOT11S65
AOT11S65

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 13.2nC By provi

1.2. aot11s65.pdf Size:299K _aosemi

AOT11S65
AOT11S65

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 13.2nC By provi

 3.1. aot11s60l.pdf Size:292K _aosemi

AOT11S65
AOT11S65

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 11nC By providin

3.2. aot11s60.pdf Size:292K _aosemi

AOT11S65
AOT11S65

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 11nC By providin

Datasheet: AOT10N60 , AOT10N65 , AOT10T60P , AOT1100L , AOT11C60 , AOT11N60 , AOT11N70 , AOT11S60 , IRF840 , AOT12N30 , AOT12N40 , AOT12N50 , AOT12N60 , AOT12N60FD , AOT12N65 , AOT13N50 , AOT1404L .

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