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AOT11S65 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT11S65

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 198 W

Предельно допустимое напряжение сток-исток (Uds): 650 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 11 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 20 ns

Выходная емкость (Cd): 42 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.399 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT11S65

 

 

AOT11S65 Datasheet (PDF)

1.1. aot11s65l.pdf Size:300K _aosemi

AOT11S65
AOT11S65

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 13.2nC By provi

1.2. aot11s65.pdf Size:299K _aosemi

AOT11S65
AOT11S65

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 13.2nC By provi

 

 3.1. aot11s60l.pdf Size:292K _aosemi

AOT11S65
AOT11S65

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 11nC By providin

3.2. aot11s60.pdf Size:292K _aosemi

AOT11S65
AOT11S65

AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced αMOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399Ω performance and robustness in switching applications. Qg,typ 11nC By providin

Другие MOSFET... AOT10N60 , AOT10N65 , AOT10T60P , AOT1100L , AOT11C60 , AOT11N60 , AOT11N70 , AOT11S60 , IRF840 , AOT12N30 , AOT12N40 , AOT12N50 , AOT12N60 , AOT12N60FD , AOT12N65 , AOT13N50 , AOT1404L .

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MOSFET: IRFR13N20DPBF | IRFR13N15DPBF | IRFR130ATM | IRFR12N25DPBF | IRFR120ZPBF | IRFR120PBF | IRFR120NPBF | IRFR120ATM | IRFR1205PBF | IRFR110PBF | IRFR1018EPBF | IRFR1010ZPBF | IRFR024PBF | IRFR024NPBF | IRFR020PBF |