AOT210L Datasheet and Replacement
Type Designator: AOT210L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 105 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO-220
AOT210L substitution
AOT210L Datasheet (PDF)
aot210l.pdf

AOT210L/AOB210L30V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT210L/AOB210L uses Trench MOSFET 30Vtechnology that is uniquely optimized to provide the most 105A ID (at VGS=10V)efficient high frequency switching performance. Power
aot210l.pdf

isc N-Channel MOSFET Transistor AOT210LFEATURESLow drain-source on-resistance:RDS(on) 2.9mHigh frequency switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFor fast switching power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VD
aot2144l aob2144l.pdf

AOT2144L/AOB2144L40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
aot2146l.pdf

AOT2146L/AOB2146LTM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOT1606L , AOT1608L , AOT16N50 , AOT1N60 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , 2SK3878 , AOT22N50 , AOT240L , AOT2500L , AOT254L , AOT25S65 , AOT2606L , AOT2608L , AOT260L .
History: SI7411DN | SWP065R68E7T | DMT10H009LCG | UT20N03L-TN3-R | STF42N65M5 | TSM3900DCX6
Keywords - AOT210L MOSFET datasheet
AOT210L cross reference
AOT210L equivalent finder
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History: SI7411DN | SWP065R68E7T | DMT10H009LCG | UT20N03L-TN3-R | STF42N65M5 | TSM3900DCX6



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