AOT210L Specs and Replacement
Type Designator: AOT210L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 105 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ -
Output Capacitance: 1320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO-220
- MOSFET ⓘ Cross-Reference Search
AOT210L datasheet
..1. Size:247K aosemi
aot210l.pdf 
AOT210L/AOB210L 30V N-Channel MOSFET General Description Product Summary VDS The AOT210L/AOB210L uses Trench MOSFET 30V technology that is uniquely optimized to provide the most 105A ID (at VGS=10V) efficient high frequency switching performance. Power ... See More ⇒
..2. Size:245K inchange semiconductor
aot210l.pdf 
isc N-Channel MOSFET Transistor AOT210L FEATURES Low drain-source on-resistance RDS(on) 2.9m High frequency switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION For fast switching power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V D... See More ⇒
9.1. Size:320K 1
aot2144l aob2144l.pdf 
AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.2. Size:372K aosemi
aot2146l.pdf 
AOT2146L/AOB2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.3. Size:384K aosemi
aot2144l aob2144l.pdf 
AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.4. Size:384K aosemi
aot2144l.pdf 
AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.5. Size:786K aosemi
aot2140l aob2140l.pdf 
AOT2140L/AOB2140L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.6. Size:373K aosemi
aot2140l.pdf 
AOT2140L/AOB2140L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.7. Size:425K aosemi
aot2142l aotf2142l.pdf 
AOT2142L/AOTF2142L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A / 112A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.8. Size:242K aosemi
aot2142l.pdf 
AOT2142L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.9. Size:460K aosemi
aot2146l aob2146l.pdf 
AOT2146L/AOB2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.10. Size:260K inchange semiconductor
aot2146l.pdf 
isc N-Channel MOSFET Transistor AOT2146L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
9.11. Size:259K inchange semiconductor
aot2144l.pdf 
isc N-Channel MOSFET Transistor AOT2144L FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
9.12. Size:259K inchange semiconductor
aot2140l.pdf 
isc N-Channel MOSFET Transistor AOT2140L FEATURES Drain Current I = 195A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: AOT1606L, AOT1608L, AOT16N50, AOT1N60, AOT20C60, AOT20N25, AOT20N60, AOT20S60, 8205A, AOT22N50, AOT240L, AOT2500L, AOT254L, AOT25S65, AOT2606L, AOT2608L, AOT260L
Keywords - AOT210L MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.