AOT210L. Аналоги и основные параметры
Наименование производителя: AOT210L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 176 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 105 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 1320 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0029 Ohm
Тип корпуса: TO-220
Аналог (замена) для AOT210L
- подборⓘ MOSFET транзистора по параметрам
AOT210L даташит
..1. Size:247K aosemi
aot210l.pdf 

AOT210L/AOB210L 30V N-Channel MOSFET General Description Product Summary VDS The AOT210L/AOB210L uses Trench MOSFET 30V technology that is uniquely optimized to provide the most 105A ID (at VGS=10V) efficient high frequency switching performance. Power
..2. Size:245K inchange semiconductor
aot210l.pdf 

isc N-Channel MOSFET Transistor AOT210L FEATURES Low drain-source on-resistance RDS(on) 2.9m High frequency switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION For fast switching power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V D
9.1. Size:320K 1
aot2144l aob2144l.pdf 

AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:372K aosemi
aot2146l.pdf 

AOT2146L/AOB2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:384K aosemi
aot2144l aob2144l.pdf 

AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:384K aosemi
aot2144l.pdf 

AOT2144L/AOB2144L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120 A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:786K aosemi
aot2140l aob2140l.pdf 

AOT2140L/AOB2140L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:373K aosemi
aot2140l.pdf 

AOT2140L/AOB2140L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.7. Size:425K aosemi
aot2142l aotf2142l.pdf 

AOT2142L/AOTF2142L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A / 112A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:242K aosemi
aot2142l.pdf 

AOT2142L 40V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 120A Low Gate Charge RDS(ON) (at VGS=10V)
9.9. Size:460K aosemi
aot2146l aob2146l.pdf 

AOT2146L/AOB2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:260K inchange semiconductor
aot2146l.pdf 

isc N-Channel MOSFET Transistor AOT2146L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
9.11. Size:259K inchange semiconductor
aot2144l.pdf 

isc N-Channel MOSFET Transistor AOT2144L FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 2.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
9.12. Size:259K inchange semiconductor
aot2140l.pdf 

isc N-Channel MOSFET Transistor AOT2140L FEATURES Drain Current I = 195A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 1.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
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