AOT254L MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT254L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.7 V
Maximum Drain Current |Id|: 32 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 110 pF
Maximum Drain-Source On-State Resistance (Rds): 0.046 Ohm
Package: TO-220
AOT254L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT254L Datasheet (PDF)
1.1. aot254l.pdf 
Size:306K _aosemi
AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 32A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 46mΩ conduction and switching power losses are minimized RDS(ON) (at VGS =4.5V) < 53mΩ due to an extre
5.1. aot25s65.pdf Size:311K _aosemi
AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19Ω performance and robustness in switching applications. Qg,typ 26.4nC By provi
5.2. aot2502l.pdf Size:334K _aosemi
AOT2502L/AOB2502L 150V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 150V • Low RDS(ON) ID (at VGS=10V) 106A • Low Gate Charge RDS(ON) (at VGS=10V) < 11mΩ (10.7mΩ*) • Optimized for fast-switching applications Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Indust
5.3. aot25s65l.pdf Size:311K _aosemi
AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19Ω performance and robustness in switching applications. Qg,typ 26.4nC By provi
5.4. aot2500l.pdf Size:297K _aosemi
AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary VDS The AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 7.6mΩ (<7.3mΩ∗) conduction and switching power losse
Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .
