AOT254L/AOB254L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOT254L/AOB254L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 32Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOT254LFEATURESDrain Current I = 32A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 46m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

AOT2500L/AOB2500L150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

AOT25S65/AOB25S65/AOTF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT25S65 & AOB25S65 & AOTF25S65 have beenfabricated using the advanced MOSTM high voltage IDM 104Aprocess that is designed to deliver high levels of RDS(ON),max 0.19performance and robustness in switching applications. Qg,typ 26.4nCBy provi

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

AOT25S65/AOB25S65/AOTF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT25S65 & AOB25S65 & AOTF25S65 have beenfabricated using the advanced MOSTM high voltage IDM 104Aprocess that is designed to deliver high levels of RDS(ON),max 0.19performance and robustness in switching applications. Qg,typ 26.4nCBy provi

isc N-Channel MOSFET Transistor AOT2500LFEATURESDrain Current I = 152A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor AOT25S65FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor AOT2502LFEATURESDrain Current I = 106A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp