AOT2606L MOSFET Datasheet: N-Ch, 60V, 72A. Full specification with pinout and replacement list

AOT2606L Specs and Replacement

   Type Designator: AOT2606L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220

AOT2606L substitution

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AOT2606L datasheet

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AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) ... See More ⇒

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AOT2608L/AOB2608L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72A technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) ... See More ⇒

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AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V) ... See More ⇒

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isc N-Channel MOSFET Transistor AOT2608L FEATURES Drain Current I = 72A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒