All MOSFET. AOT270AL Datasheet

 

AOT270AL MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT270AL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 500 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.3 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 20 nS

Drain-Source Capacitance (Cd): 1520 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm

Package: TO-220

AOT270AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT270AL Datasheet (PDF)

1.1. aot270al.pdf Size:324K _aosemi

AOT270AL
AOT270AL

AOT270AL/AOB270AL 75V N-Channel MOSFET General Description Product Summary VDS 75V The AOT270AL/AOB270AL uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 2.6mΩ (< 2.4mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 3.2

4.1. aot270l.pdf Size:329K _aosemi

AOT270AL
AOT270AL

AOT270L/AOB270L 75V N-Channel MOSFET General Description Product Summary VDS 75V The AOT270L/AOB270L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 2.6mΩ (< 2.3mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 3.0mΩ

 5.1. aot27s60.pdf Size:295K _aosemi

AOT270AL
AOT270AL

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16Ω performance and robustness in switching applications. Qg,typ 26nC By providin

5.2. aot27s60l.pdf Size:295K _aosemi

AOT270AL
AOT270AL

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16Ω performance and robustness in switching applications. Qg,typ 26nC By providin

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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