All MOSFET. AOT270AL Equivalents Search

AOT270AL/AOB270AL 75V N-Channel MOSFET General Description Product Summary VDS 75V The AOT270AL/AOB270AL uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) ... See More ⇒

sc N-Channel MOSFET Transistor AOT270AL FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS Static Drain-Source On-Resistance R = 2.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒

AOT270L/AOB270L 75V N-Channel MOSFET General Description Product Summary VDS 75V The AOT270L/AOB270L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) ... See More ⇒

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin... See More ⇒

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin... See More ⇒

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced MOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16 performance and robustness in switching applications. Qg,typ 26nC By providin... See More ⇒

isc N-Channel MOSFET Transistor AOT27S60 FEATURES Drain Current I = 27A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.16 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen... See More ⇒