All MOSFET. AOT282L Datasheet

 

AOT282L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT282L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 272.5 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 105 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 58 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 960 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm

Package: TO-220

AOT282L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT282L Datasheet (PDF)

1.1. aot282l.pdf Size:260K _inchange_semiconductor

AOT282L
AOT282L

isc N-Channel MOSFET Transistor AOT282L ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARA

1.2. aot282l.pdf Size:276K _aosemi

AOT282L
AOT282L

AOT282L/AOB282L 80V N-Channel MOSFET General Description Product Summary VDS The AOT282L & AOB282L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.2m

 5.1. aot286l.pdf Size:245K _inchange_semiconductor

AOT282L
AOT282L

isc N-Channel MOSFET Transistor AOT286L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤6mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. ·AB

5.2. aot280l.pdf Size:269K _aosemi

AOT282L
AOT282L

AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 2.7mΩ (< 2.2mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 3.5mΩ (< 3.1mΩ∗) conduction and switching power losses are

 5.3. aob284l aot284l.pdf Size:272K _aosemi

AOT282L
AOT282L

AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary VDS The AOT284L & AOB284L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.3mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.7m

5.4. aot286l.pdf Size:285K _aosemi

AOT282L
AOT282L

AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 6.0mΩ (< 5.7mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 7.9mΩ (< 7.6mΩ∗) conduction and switching power losses are

 5.5. aot288l.pdf Size:363K _aosemi

AOT282L
AOT282L

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 9.2mΩ(< 8.9mΩ*) Both conduction and switching power losses are RDS(ON) (at VGS=6V)

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
Back to Top