AOT282L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOT282L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 272.5 W
Предельно допустимое напряжение сток-исток (Uds): 80 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 3.5 V
Максимально допустимый постоянный ток стока (Id): 105 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 18 ns
Выходная емкость (Cd): 960 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm
Тип корпуса: TO-220
AOT282L Datasheet (PDF)
1.1. aot282l.pdf 
Size:276K _aosemi
AOT282L/AOB282L 80V N-Channel MOSFET General Description Product Summary VDS The AOT282L & AOB282L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.2m
5.1. aot284l.pdf Size:272K _aosemi
AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary VDS The AOT284L & AOB284L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.3mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.7m
5.2. aot280l.pdf Size:269K _aosemi
AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 2.7mΩ (< 2.2mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 3.5mΩ (< 3.1mΩ∗) conduction and switching power losses are
5.3. aot288l.pdf Size:363K _aosemi
AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 9.2mΩ(< 8.9mΩ*) Both conduction and switching power losses are RDS(ON) (at VGS=6V)
5.4. aot286l.pdf Size:285K _aosemi
AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 6.0mΩ (< 5.7mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 7.9mΩ (< 7.6mΩ∗) conduction and switching power losses are
Другие MOSFET... AOT2610L , AOT2618L , AOT262L , AOT264L , AOT266L , AOT270AL , AOT27S60 , AOT280L , J111 , AOT284L , AOT286L , AOT288L , AOT290L , AOT2910L , AOT2916L , AOT2918L , AOT292L .
