Справочник MOSFET. AOT282L

 

AOT282L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT282L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 272.5 W

Предельно допустимое напряжение сток-исток (Uds): 80 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3.5 V

Максимально допустимый постоянный ток стока (Id): 105 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 58 nC

Время нарастания (tr): 18 ns

Выходная емкость (Cd): 960 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT282L

 

 

AOT282L Datasheet (PDF)

1.1. aot282l.pdf Size:276K _aosemi

AOT282L
AOT282L

AOT282L/AOB282L 80V N-Channel MOSFET General Description Product Summary VDS The AOT282L & AOB282L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.2m

5.1. aot284l.pdf Size:272K _aosemi

AOT282L
AOT282L

AOT284L/AOB284L 80V N-Channel MOSFET General Description Product Summary VDS The AOT284L & AOB284L uses trench MOSFET 80V technology that is uniquely optimized to provide the most ID (at VGS=10V) 105A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.3mΩ∗) conduction and switching power losses are minimized due RDS(ON) (at VGS=6V) < 5.7m

5.2. aot280l.pdf Size:269K _aosemi

AOT282L
AOT282L

AOT280L/AOB280L 80V N-Channel MOSFET General Description Product Summary VDS The AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 2.7mΩ (< 2.2mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 3.5mΩ (< 3.1mΩ∗) conduction and switching power losses are

 5.3. aot288l.pdf Size:363K _aosemi

AOT282L
AOT282L

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 9.2mΩ(< 8.9mΩ*) Both conduction and switching power losses are RDS(ON) (at VGS=6V)

5.4. aot286l.pdf Size:285K _aosemi

AOT282L
AOT282L

AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary VDS The AOT286L/AOB286L uses Trench MOSFET 80V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 6.0mΩ (< 5.7mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 7.9mΩ (< 7.6mΩ∗) conduction and switching power losses are

Другие MOSFET... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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Список транзисторов

Обновления

MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

 

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