All MOSFET. AOT2N60 Datasheet

 

AOT2N60 Datasheet and Replacement


   Type Designator: AOT2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.3 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO-220
 

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AOT2N60 Datasheet (PDF)

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AOT2N60

AOT2N60/AOTF2N60600V,2A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT2N60 & AOTF2N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 2Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:261K  inchange semiconductor
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AOT2N60

isc N-Channel MOSFET Transistor AOT2N60FEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Datasheet: AOT290L , AOT2910L , AOT2916L , AOT2918L , AOT292L , AOT296L , AOT298L , AOT29S50 , IRFP250 , AOT3N100 , AOT3N50 , AOT3N60 , AOT404 , AOT410L , AOT412 , AOT414 , AOT416 .

History: UT2955G-TN3-R | IXTP10P50P | GSM2519 | AONS66917T

Keywords - AOT2N60 MOSFET datasheet

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