AOT2N60 Specs and Replacement
Type Designator: AOT2N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14.3 nS
Cossⓘ - Output Capacitance: 29 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
Package: TO-220
AOT2N60 substitution
- MOSFET ⓘ Cross-Reference Search
AOT2N60 datasheet
aot2n60.pdf
AOT2N60/AOTF2N60 600V,2A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 2A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aot2n60.pdf
isc N-Channel MOSFET Transistor AOT2N60 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =4.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒
Detailed specifications: AOT290L, AOT2910L, AOT2916L, AOT2918L, AOT292L, AOT296L, AOT298L, AOT29S50, AON7506, AOT3N100, AOT3N50, AOT3N60, AOT404, AOT410L, AOT412, AOT414, AOT416
Keywords - AOT2N60 MOSFET specs
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