All MOSFET. AOT2N60 Datasheet

 

AOT2N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOT2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 14.3 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm
   Package: TO-220

 AOT2N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT2N60 Datasheet (PDF)

 ..1. Size:160K  aosemi
 aot2n60.pdf

AOT2N60 AOT2N60

AOT2N60/AOTF2N60600V,2A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT2N60 & AOTF2N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 2Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:261K  inchange semiconductor
 aot2n60.pdf

AOT2N60 AOT2N60

isc N-Channel MOSFET Transistor AOT2N60FEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =4.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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