AOT7N60 MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

AOT7N60 Specs and Replacement

Type Designator: AOT7N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49.5 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

AOT7N60 substitution

- MOSFET ⓘ Cross-Reference Search

AOT7N60 datasheet

..1. Size:498K aosemi
aot7n60.pdf pdf_icon

AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:488K aosemi
aot7n60 aotf7n60.pdf pdf_icon

..3. Size:261K inchange semiconductor
aot7n60.pdf pdf_icon

isc N-Channel MOSFET Transistor AOT7N60 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

8.1. Size:408K aosemi
aot7n65.pdf pdf_icon

AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒