AOT7N70
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT7N70
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 198
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20.5
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8
Ohm
Package:
TO-220
AOT7N70
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT7N70
Datasheet (PDF)
..1. Size:540K aosemi
aot7n70.pdf 
AOT7N70/AOTF7N70700V, 7A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT7N70 & AOTF7N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
..2. Size:261K inchange semiconductor
aot7n70.pdf
isc N-Channel MOSFET Transistor AOT7N70FEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:408K aosemi
aot7n65.pdf
AOT7N65/AOTF7N65650V, 7A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT7N65 & AOTF7N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.2. Size:498K aosemi
aot7n60.pdf
AOT7N60/AOTF7N60600V,7A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT7N60 & AOTF7N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
9.3. Size:261K inchange semiconductor
aot7n65.pdf
isc N-Channel MOSFET Transistor AOT7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.4. Size:261K inchange semiconductor
aot7n60.pdf
isc N-Channel MOSFET Transistor AOT7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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