Справочник MOSFET. AOT7N70

 

AOT7N70 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT7N70
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 198 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 20.5 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AOT7N70

 

 

AOT7N70 Datasheet (PDF)

 ..1. Size:540K  aosemi
 aot7n70.pdf

AOT7N70 AOT7N70

AOT7N70/AOTF7N70700V, 7A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT7N70 & AOTF7N70 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:261K  inchange semiconductor
 aot7n70.pdf

AOT7N70 AOT7N70

isc N-Channel MOSFET Transistor AOT7N70FEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:408K  aosemi
 aot7n65.pdf

AOT7N70 AOT7N70

AOT7N65/AOTF7N65650V, 7A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT7N65 & AOTF7N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.2. Size:498K  aosemi
 aot7n60.pdf

AOT7N70 AOT7N70

AOT7N60/AOTF7N60600V,7A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT7N60 & AOTF7N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.3. Size:261K  inchange semiconductor
 aot7n65.pdf

AOT7N70 AOT7N70

isc N-Channel MOSFET Transistor AOT7N65FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =1.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.4. Size:261K  inchange semiconductor
 aot7n60.pdf

AOT7N70 AOT7N70

isc N-Channel MOSFET Transistor AOT7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Другие MOSFET... AOT4S60 , AOT500 , AOT502 , AOT5N100 , AOT5N50 , AOT5N60 , AOT7N60 , AOT7N65 , SPW47N60C3 , AOT7S60 , AOT7S65 , AOT8N50 , AOT8N60 , AOT8N65 , AOT8N80 , AOT9N40 , AOT9N50 .

 

 
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