AOTF11N62 Specs and Replacement

Type Designator: AOTF11N62

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 620 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 146 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO-220F

AOTF11N62 substitution

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AOTF11N62 datasheet

 ..1. Size:544K  aosemi
aotf11n62.pdf pdf_icon

AOTF11N62

AOTF11N62 620V,11A N-Channel MOSFET General Description Product Summary VDS 720V@150 The AOTF11N62 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:251K  inchange semiconductor
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AOTF11N62

isc N-Channel MOSFET Transistor AOTF11N62 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 620V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 6.1. Size:545K  aosemi
aotf11n60.pdf pdf_icon

AOTF11N62

AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60 & AOTF11N60 have been fabricated 700V@150 using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

 6.2. Size:457K  aosemi
aot11n60l aotf11n60l aotf11n60.pdf pdf_icon

AOTF11N62

AOT11N60L/AOTF11N60L/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60L & AOTF11N60L & AOTF11N60 700V@150 have been fabricated using an advanced high voltage ID (at VGS=10V) 11A MOSFET process that is designed to deliver high RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOTF10N50FD, AOTF10N60, AOTF10N65, AOTF10N90, AOTF10T60, AOTF10T60P, AOTF11C60, AOTF11N60, IRF740, AOTF11N70, AOTF11S60, AOTF11S65, AOTF12N30, AOTF12N50, AOTF12N60, AOTF12N60FD, AOTF12N65

Keywords - AOTF11N62 MOSFET specs

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