Справочник MOSFET. AOTF11N62

 

AOTF11N62 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF11N62
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 620 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30.6 nC
   trⓘ - Время нарастания: 58 ns
   Cossⓘ - Выходная емкость: 146 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для AOTF11N62

 

 

AOTF11N62 Datasheet (PDF)

 ..1. Size:544K  aosemi
 aotf11n62.pdf

AOTF11N62 AOTF11N62

AOTF11N62620V,11A N-Channel MOSFETGeneral Description Product Summary VDS720V@150The AOTF11N62 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

 ..2. Size:251K  inchange semiconductor
 aotf11n62.pdf

AOTF11N62 AOTF11N62

isc N-Channel MOSFET Transistor AOTF11N62FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 620V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 6.1. Size:545K  aosemi
 aotf11n60.pdf

AOTF11N62 AOTF11N62

AOT11N60/AOTF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT11N60 & AOTF11N60 have been fabricated 700V@150using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.2. Size:251K  inchange semiconductor
 aotf11n60.pdf

AOTF11N62 AOTF11N62

isc N-Channel MOSFET Transistor AOTF11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.1. Size:218K  aosemi
 aotf11n70.pdf

AOTF11N62 AOTF11N62

AOT11N70/AOTF11N70700V,11A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT11N70 & AOTF11N70 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 7.2. Size:252K  inchange semiconductor
 aotf11n70.pdf

AOTF11N62 AOTF11N62

isc N-Channel MOSFET Transistor AOTF11N70FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.87(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STP60NE06-16 | NDP710A

 

 
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