All MOSFET. AOTF11S60 Datasheet

 

AOTF11S60 Datasheet and Replacement


   Type Designator: AOTF11S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 37.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm
   Package: TO-220F
 

 AOTF11S60 substitution

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AOTF11S60 Datasheet (PDF)

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AOTF11S60

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

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AOTF11S60

isc N-Channel MOSFET Transistor AOTF11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

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 aotf11s65.pdf pdf_icon

AOTF11S60

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

 6.2. Size:300K  aosemi
 aotf11s65l.pdf pdf_icon

AOTF11S60

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

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Datasheet: AOTF10N65 , AOTF10N90 , AOTF10T60 , AOTF10T60P , AOTF11C60 , AOTF11N60 , AOTF11N62 , AOTF11N70 , 20N60 , AOTF11S65 , AOTF12N30 , AOTF12N50 , AOTF12N60 , AOTF12N60FD , AOTF12N65 , AOTF12T50P , AOTF12T50PL .

History: PMPB20UN | CHT2302GP | AOTF11S65 | AOTF12N50

Keywords - AOTF11S60 MOSFET datasheet

 AOTF11S60 cross reference
 AOTF11S60 equivalent finder
 AOTF11S60 lookup
 AOTF11S60 substitution
 AOTF11S60 replacement

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