Справочник MOSFET. AOTF11S60

 

AOTF11S60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF11S60
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 37.3 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.399 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для AOTF11S60

 

 

AOTF11S60 Datasheet (PDF)

 ..1. Size:292K  aosemi
 aotf11s60.pdf

AOTF11S60 AOTF11S60

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

 ..2. Size:253K  inchange semiconductor
 aotf11s60.pdf

AOTF11S60 AOTF11S60

isc N-Channel MOSFET Transistor AOTF11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 6.1. Size:299K  aosemi
 aotf11s65.pdf

AOTF11S60 AOTF11S60

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

 6.2. Size:300K  aosemi
 aotf11s65l.pdf

AOTF11S60 AOTF11S60

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

 6.3. Size:250K  inchange semiconductor
 aotf11s65.pdf

AOTF11S60 AOTF11S60

isc N-Channel MOSFET Transistor AOTF11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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