All MOSFET. AOTF12T60P Datasheet

 

AOTF12T60P Datasheet and Replacement


   Type Designator: AOTF12T60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   tr ⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: TO-220F
 

 AOTF12T60P substitution

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AOTF12T60P Datasheet (PDF)

 ..1. Size:498K  aosemi
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AOTF12T60P

AOB12T60P/AOTF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 5.1. Size:233K  aosemi
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AOTF12T60P

AOTF12T60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 7.1. Size:447K  aosemi
aotf12t50p.pdf pdf_icon

AOTF12T60P

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

 7.2. Size:447K  aosemi
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AOTF12T60P

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

Datasheet: AOTF12N30 , AOTF12N50 , AOTF12N60 , AOTF12N60FD , AOTF12N65 , AOTF12T50P , AOTF12T50PL , AOTF12T60 , IRF630 , AOTF13N50 , AOTF14N50 , AOTF14N50FD , AOTF15S60 , AOTF15S65 , AOTF16N50 , AOTF18N65 , AOTF20C60 .

Keywords - AOTF12T60P MOSFET datasheet

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 AOTF12T60P equivalent finder
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