HP4410DY Datasheet and Replacement
Type Designator: HP4410DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: SO8
HP4410DY substitution
HP4410DY Datasheet (PDF)
hp4410dy.pdf
HP4410DYData Sheet December 200110A, 30V, 0.0135 Ohm, Single N-Channel, FeaturesLogic Level Power MOSFET Logic Level Gate DriveThis power MOSFET is manufactured using an innovative 10A, 30Vprocess. This advanced process technology achieves the rDS(ON) = 0.0135 at ID = 10A, VGS = 10Vlowest possible on-resistance per silicon area, resulting in outstanding perform
Datasheet: HAT2061R , HAT2064R , HAT2065R , HAT2068R , HAT2070R , HAT2077R , HEPF2004 , HEPF2007A , IRFP250N , HP4936DY , HPLR3103 , HPLU3103 , HR3N187 , HR3N200 , HRF3205 , HRF3205S , HRFZ44N .
History: STP60N06-16
Keywords - HP4410DY MOSFET datasheet
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History: STP60N06-16
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