All MOSFET. AOTF260L Datasheet

 

AOTF260L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTF260L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2 V
   |Id|ⓘ - Maximum Drain Current: 92 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO-220F

 AOTF260L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF260L Datasheet (PDF)

 ..1. Size:255K  aosemi
 aotf260l.pdf

AOTF260L AOTF260L

AOTF260L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOTF260L uses Trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 92Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 ..2. Size:236K  inchange semiconductor
 aotf260l.pdf

AOTF260L AOTF260L

isc N-Channel MOSFET Transistor AOTF260LFEATURESDrain Current I = 92A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 7.1. Size:349K  aosemi
 aotf2606l.pdf

AOTF260L AOTF260L

AOT2606L/AOB2606L/AOTF2606L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2606L & AOB2606L & AOTF2606L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 7.2. Size:262K  inchange semiconductor
 aotf2606l.pdf

AOTF260L AOTF260L

sc N-Channel MOSFET Transistor AOTF2606LFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATIN

 8.1. Size:348K  aosemi
 aotf2610l.pdf

AOTF260L AOTF260L

AOT2610L/AOTF2610L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2610L & AOTF2610L uses trench MOSFET 60Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 55A / 35Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.2. Size:405K  aosemi
 aotf266l.pdf

AOTF260L AOTF260L

AOT266L/AOB266L/AOTF266L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT266L & AOB266L & AOTF266L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.3. Size:367K  aosemi
 aotf2618l.pdf

AOTF260L AOTF260L

AOT2618L/AOB2618L/AOTF2618L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2618L & AOB2618L & AOTF2618L uses trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 8.4. Size:313K  aosemi
 aotf262l.pdf

AOTF260L AOTF260L

AOTF262L60V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.5. Size:235K  inchange semiconductor
 aotf266l.pdf

AOTF260L AOTF260L

isc N-Channel MOSFET Transistor AOTF266LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 8.6. Size:202K  inchange semiconductor
 aotf2618l.pdf

AOTF260L AOTF260L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF2618LFEATURESWith TO-220F packagingHigh speed switchingEasy to useThe most efficient high frequency switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicat

 8.7. Size:235K  inchange semiconductor
 aotf262l.pdf

AOTF260L AOTF260L

isc N-Channel MOSFET Transistor AOTF262LFEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFPC60

 

 
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