AOTF260L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOTF260L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 46.5 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.2 V
Максимально допустимый постоянный ток стока |Id|: 92 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 150 nC
Время нарастания (tr): 27 ns
Выходная емкость (Cd): 1360 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0026 Ohm
Тип корпуса: TO-220F
AOTF260L Datasheet (PDF)
aotf260l.pdf
AOTF260L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOTF260L uses Trench MOSFET technology that is 60Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 92Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
aotf260l.pdf
isc N-Channel MOSFET Transistor AOTF260LFEATURESDrain Current I = 92A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 2.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
aotf2606l.pdf
AOT2606L/AOB2606L/AOTF2606L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2606L & AOB2606L & AOTF2606L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aotf2606l.pdf
sc N-Channel MOSFET Transistor AOTF2606LFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATIN
aotf2610l.pdf
AOT2610L/AOTF2610L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2610L & AOTF2610L uses trench MOSFET 60Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 55A / 35Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)
aotf266l.pdf
AOT266L/AOB266L/AOTF266L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT266L & AOB266L & AOTF266L uses Trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aotf2618l.pdf
AOT2618L/AOB2618L/AOTF2618L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2618L & AOB2618L & AOTF2618L uses trench 60VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
aotf262l.pdf
AOTF262L60V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
aotf266l.pdf
isc N-Channel MOSFET Transistor AOTF266LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aotf2618l.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF2618LFEATURESWith TO-220F packagingHigh speed switchingEasy to useThe most efficient high frequency switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicat
aotf262l.pdf
isc N-Channel MOSFET Transistor AOTF262LFEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
