All MOSFET. AOTF288L Datasheet

 

AOTF288L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTF288L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 265 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO-220F

 AOTF288L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF288L Datasheet (PDF)

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 aotf288l.pdf

AOTF288L AOTF288L

AOT288L/AOB288L/AOTF288L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT288L & AOB288L & AOTF288L uses trench 80VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 ..2. Size:236K  inchange semiconductor
 aotf288l.pdf

AOTF288L AOTF288L

isc N-Channel MOSFET Transistor AOTF288LFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 9.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

 8.1. Size:242K  aosemi
 aotf286l.pdf

AOTF288L AOTF288L

AOTF286L80V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 80V Low RDS(ON) ID (at VGS=10V) 56A Low Gate Charge RDS(ON) (at VGS=10V)

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 aotf280a60l.pdf

AOTF288L AOTF288L

AOTF280A60L/AOT280A60L/AOB280A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max

 8.3. Size:236K  inchange semiconductor
 aotf286l.pdf

AOTF288L AOTF288L

isc N-Channel MOSFET Transistor AOTF286LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CS3N80FA9 | CS2302 | FDB4030L | CS4N70A3D | IXFK44N50 | CS3410B4

 

 
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