Аналог (замена) для AOTF288L

AOTF288L Datasheet (PDF)

1.1. aotf288l.pdf Size:363K _aosemi

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description Product Summary VDS The AOT288L & AOB288L & AOTF288L uses trench 80V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 46A / 43A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 9.2mΩ(< 8.9mΩ*) Both conduction and switching power losses are RDS(ON) (at VGS=6V)

4.1. aotf286l.pdf Size:242K _aosemi

AOTF286L 80V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 80V • Low RDS(ON) ID (at VGS=10V) 56A • Low Gate Charge RDS(ON) (at VGS=10V) < 6mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=6V) < 8mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • I

 5.1. aotf2n60.pdf Size:160K _aosemi

AOT2N60/AOTF2N60 600V,2A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 2A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 4.4Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

5.2. aotf20c60p.pdf Size:462K _aosemi

AOTF20C60P 600V,20A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 80A • Low Ciss and Crss RDS(ON),max < 0.25Ω • High Current Capability Qg,typ 52nC Eoss @ 400V 8.2µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industri

 5.3. aotf2606l.pdf Size:349K _aosemi

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) Both conduction and switching power losses are minimized due to a

5.4. aotf290l.pdf Size:323K _aosemi

AOTF290L 100V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 100V • Low RDS(ON) ID (at VGS=10V) 72A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.2mΩ • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC

 5.5. aotf2610l.pdf Size:348K _aosemi

AOT2610L/AOTF2610L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2610L & AOTF2610L uses trench MOSFET 60V technology that is uniquely optimized to provide the most ID (at VGS=10V) 55A / 35A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 10.7mΩ conduction and switching power losses are minimized due RDS(ON) (at VGS=4.5V) < 13.5m�

5.6. aotf262l.pdf Size:313K _aosemi

AOTF262L 60V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 60V • Low RDS(ON) ID (at VGS=10V) 85A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.6mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=6V) < 4.1mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters �

5.7. aotf266l.pdf Size:405K _aosemi

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) Both conduction and switching power losses are RDS(ON) (at VGS=6V

5.8. aotf2918l.pdf Size:381K _aosemi

AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 7mΩ Power losses are minimized due to an extremely low combination of RDS(ON) and Cr

5.9. aotf2146l.pdf Size:332K _aosemi

AOTF2146L TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 80A • Low RDS(ON) • Low Gate Charge RDS(ON) (at VGS=10V) < 2.8mΩ • Optimized Ruggedness RDS(ON) (at VGS=4.5V) < 3.9mΩ • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% Rg Tested • DC Motor Driver • Sy

5.10. aotf20s60l.pdf Size:325K _aosemi

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199Ω performance and robustness in switching applications. Qg,typ 20nC By providin

5.11. aotf240l.pdf Size:418K _aosemi

AOT240L/AOB240L/AOTF240L 40V N-Channel MOSFET General Description Product Summary VDS The AOT240L & AOB240L & AOTF240L uses Trench 40V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 2.9mΩ (< 2.6mΩ∗) Power losses are minimized due to an extremely low RDS(ON) (at VG

5.12. aotf20s60.pdf Size:324K _aosemi

AOT20S60/AOB20S60/AOTF20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage IDM 80A process that is designed to deliver high levels of RDS(ON),max 0.199Ω performance and robustness in switching applications. Qg,typ 20nC By providin

5.13. aotf29s50.pdf Size:324K _aosemi

AOT29S50/AOB29S50/AOTF29S50 TM 500V 29A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 600V The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced αMOSTM high voltage IDM 120A process that is designed to deliver high levels of RDS(ON),max 0.15Ω performance and robustness in switching applications. Qg,typ 26.6nC By provi

5.14. aotf22n50.pdf Size:534K _aosemi

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

5.15. aotf260l.pdf Size:255K _aosemi

AOTF260L 60V N-Channel MOSFET General Description Product Summary VDS The AOTF260L uses Trench MOSFET technology that is 60V uniquely optimized to provide the most efficient high ID (at VGS=10V) 92A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 2.6mΩ switching power losses are minimized due to an extremely RDS(ON) (at VGS=6V) < 3.0mΩ low combinati

5.16. aotf292l.pdf Size:440K _aosemi

AOT292L/AOB292L/AOTF292L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V • Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A • Low RDS(ON) • RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V) < 4.5mΩ (< 4.1mΩ∗) RDS(ON) (at VGS=6V) < 5.3mΩ (< 4.9mΩ∗) Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification fo

5.17. aotf256l.pdf Size:282K _aosemi

AOTF256L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOTF256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 85mΩ switching power losses are minimized due to an RDS(ON) (at VGS=4.5V) < 100mΩ extremely low combi

5.18. aotf27s60.pdf Size:295K _aosemi

AOT27S60/AOB27S60/AOTF27S60 TM 600V 27A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage IDM 110A process that is designed to deliver high levels of RDS(ON),max 0.16Ω performance and robustness in switching applications. Qg,typ 26nC By providin

5.19. aotf298l.pdf Size:378K _aosemi

AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description Product Summary VDS The AOT298L & AOB298L & AOTF298L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 14.5mΩ Power losses are minimized due to an extremely low combination of RDS(ON) and C

5.20. aotf2916l.pdf Size:345K _aosemi

AOT2916L/AOTF2916L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2916L & AOTF2916L uses trench MOSFET 100V technology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 34mΩ conduction and switching power losses are minimized due RDS(ON) (at VGS=4.5V) < 43.5m�

5.21. aotf20n60.pdf Size:540K _aosemi

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

5.22. aotf20n40.pdf Size:331K _aosemi

AOTF20N40 400V,20A N-Channel MOSFET General Description Product Summary VDS 500@150℃ The AOTF20N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.25Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

5.23. aotf20c60.pdf Size:263K _aosemi

AOT20C60/AOB20C60/AOTF20C60 600V,20A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Trench Power AlphaMOS-II technology • Low RDS(ON) IDM 145A • Low Ciss and Crss RDS(ON),max < 0.25Ω • High Current Capability Qg,typ 52nC • RoHS and Halogen Free Compliant Eoss @ 400V 8.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting

5.24. aotf2910l.pdf Size:381K _aosemi

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 24mΩ (* 23.5mΩ) Both conduction and switching power losses are RDS(ON) (at

5.25. aotf25s65.pdf Size:311K _aosemi

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19Ω performance and robustness in switching applications. Qg,typ 26.4nC By provi

5.26. aotf2142l.pdf Size:423K _aosemi

AOT2142L/AOTF2142L 40V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 40V • Low RDS(ON) ID (at VGS=10V) 120A / 112A • Low Gate Charge RDS(ON) (at VGS=10V) < 1.9mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=4.5V) < 2.5mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and

5.27. aotf2618l.pdf Size:367K _aosemi

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 19mΩ Both conduction and switching power losses are RDS(ON) (at VGS=4.5V) < 25mΩ m

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