All MOSFET. AOTF2916L Datasheet

 

AOTF2916L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTF2916L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 23.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO-220F

 AOTF2916L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF2916L Datasheet (PDF)

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 aotf2916l.pdf

AOTF2916L AOTF2916L

AOT2916L/AOTF2916L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2916L & AOTF2916L uses trench MOSFET 100Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 ..2. Size:345K  aosemi
 aot2916l aotf2916l.pdf

AOTF2916L AOTF2916L

AOT2916L/AOTF2916L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2916L & AOTF2916L uses trench MOSFET 100Vtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 23A / 17Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 ..3. Size:275K  inchange semiconductor
 aotf2916l.pdf

AOTF2916L AOTF2916L

isc N-Channel MOSFET Transistor AOTF2916LFEATURES Drain-source on-resistance:RDS(on) 34m@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh fast switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 V

 7.1. Size:381K  aosemi
 aob2910l aot2910l aotf2910l.pdf

AOTF2916L AOTF2916L

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 7.2. Size:434K  aosemi
 aotf2910l.pdf

AOTF2916L AOTF2916L

AOT2910L/AOB2910L/AOTF2910L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2910L & AOB2910L & AOTF2910L uses trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 7.3. Size:381K  aosemi
 aotf2918l.pdf

AOTF2916L AOTF2916L

AOT2918L/AOB2918L/AOTF2918L100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2918L & AOB2918L & AOTF2918L uses Trench 100VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)

 7.4. Size:236K  inchange semiconductor
 aotf2910l.pdf

AOTF2916L AOTF2916L

isc N-Channel MOSFET Transistor AOTF2910LFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 7.5. Size:236K  inchange semiconductor
 aotf2918l.pdf

AOTF2916L AOTF2916L

isc N-Channel MOSFET Transistor AOTF2918LFEATURESDrain Current I = 58A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: CS3N90FA9H | CS3N70HF

 

 
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