All MOSFET. AOTF5N50FD Datasheet

 

AOTF5N50FD MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOTF5N50FD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.2 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO-220F

 AOTF5N50FD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOTF5N50FD Datasheet (PDF)

 ..1. Size:347K  aosemi
 aotf5n50fd.pdf

AOTF5N50FD AOTF5N50FD

AOTF5N50FD500V, 5A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF5N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 ..2. Size:251K  inchange semiconductor
 aotf5n50fd.pdf

AOTF5N50FD AOTF5N50FD

isc N-Channel MOSFET Transistor AOTF5N50FDFEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:159K  aosemi
 aotf5n50.pdf

AOTF5N50FD AOTF5N50FD

AOT5N50/AOTF5N50500V, 5A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT5N50 & AOTF5N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 5Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.2. Size:251K  inchange semiconductor
 aotf5n50.pdf

AOTF5N50FD AOTF5N50FD

isc N-Channel MOSFET Transistor AOTF5N50FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:338K  aosemi
 aotf5n100.pdf

AOTF5N50FD AOTF5N50FD

AOT5N100/AOTF5N1001000V,4A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT5N100 & AOTF5N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 4Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 8.2. Size:251K  inchange semiconductor
 aotf5n100.pdf

AOTF5N50FD AOTF5N50FD

isc N-Channel MOSFET Transistor AOTF5N100FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDB0630N1507L | BUZ905P | 2SK2510

 

 
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