AOTF5N50FD - Даташиты. Аналоги. Основные параметры

AOTF5N50FD500V, 5A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF5N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOTF5N50FDFEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

AOT5N50/AOTF5N50500V, 5A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT5N50 & AOTF5N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 5Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOTF5N50FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

AOT5N100/AOTF5N1001000V,4A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT5N100 & AOTF5N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 4Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOTF5N100FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp