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AOTF5N50FD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF5N50FD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 11 nC
   trⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для AOTF5N50FD

 

 

AOTF5N50FD Datasheet (PDF)

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 aotf5n50fd.pdf

AOTF5N50FD AOTF5N50FD

AOTF5N50FD500V, 5A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF5N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 ..2. Size:251K  inchange semiconductor
 aotf5n50fd.pdf

AOTF5N50FD AOTF5N50FD

isc N-Channel MOSFET Transistor AOTF5N50FDFEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:159K  aosemi
 aotf5n50.pdf

AOTF5N50FD AOTF5N50FD

AOT5N50/AOTF5N50500V, 5A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT5N50 & AOTF5N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 5Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.2. Size:251K  inchange semiconductor
 aotf5n50.pdf

AOTF5N50FD AOTF5N50FD

isc N-Channel MOSFET Transistor AOTF5N50FEATURESDrain Current I = 5.0A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:338K  aosemi
 aotf5n100.pdf

AOTF5N50FD AOTF5N50FD

AOT5N100/AOTF5N1001000V,4A N-Channel MOSFETGeneral Description Product Summary VDS1100@150The AOT5N100 & AOTF5N100 are fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 4Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

 8.2. Size:251K  inchange semiconductor
 aotf5n100.pdf

AOTF5N50FD AOTF5N50FD

isc N-Channel MOSFET Transistor AOTF5N100FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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