AOTF8T50P Specs and Replacement
Type Designator: AOTF8T50P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ -
Output Capacitance: 42 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.81 Ohm
Package: TO-220F
- MOSFET ⓘ Cross-Reference Search
AOTF8T50P datasheet
..2. Size:251K inchange semiconductor
aotf8t50p.pdf 
isc N-Channel MOSFET Transistor AOTF8T50P FEATURES Drain Current I =8A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.81 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒
9.1. Size:506K aosemi
aot8n65 aotf8n65.pdf
AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.2. Size:159K aosemi
aotf8n50.pdf
AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.3. Size:349K aosemi
aotf8n80.pdf
AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary VDS 900V@150 The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.4. Size:441K aosemi
aotf8n60.pdf
AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.5. Size:593K aosemi
aotf8b65mq1.pdf
AOTF8B65MQ1 TM 650V, 8A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 8A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.8V C) Low VCE(sat) and Vf Low turn-off switching loss and softness High effective tu... See More ⇒
9.6. Size:276K aosemi
aot8n50 aotf8n50.pdf
AOT8N50/AOTF8N50 500V, 9A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.7. Size:154K aosemi
aotf8n65.pdf
AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.8. Size:349K aosemi
aot8n80 aotf8n80.pdf
AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary VDS 900V@150 The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
9.9. Size:252K inchange semiconductor
aotf8n50.pdf
isc N-Channel MOSFET Transistor AOTF8N50 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
9.10. Size:206K inchange semiconductor
aotf8n80.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF8N80 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM... See More ⇒
9.11. Size:252K inchange semiconductor
aotf8n60.pdf
isc N-Channel MOSFET Transistor AOTF8N60 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
9.12. Size:252K inchange semiconductor
aotf8n65.pdf
isc N-Channel MOSFET Transistor AOTF8N65 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
Detailed specifications: AOTF7N70, AOTF7S65, AOTF7T60, AOTF7T60P, AOTF8N50, AOTF8N60, AOTF8N65, AOTF8N80, P60NF06, AOTF9N50, AOTF9N70, AOTF9N90, AOU1N60, AOU2N60, AOU2N60A, AOU3N50, AOU3N60
Keywords - AOTF8T50P MOSFET specs
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