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AOTF8T50P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF8T50P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 38 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 42 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.81 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для AOTF8T50P

 

 

AOTF8T50P Datasheet (PDF)

 ..1. Size:444K  aosemi
 aotf8t50p.pdf

AOTF8T50P AOTF8T50P

AOTF8T50P500V,8A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 32A Low Ciss and Crss RDS(ON),max

 ..2. Size:251K  inchange semiconductor
 aotf8t50p.pdf

AOTF8T50P AOTF8T50P

isc N-Channel MOSFET Transistor AOTF8T50PFEATURESDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.81(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:159K  aosemi
 aotf8n50.pdf

AOTF8T50P AOTF8T50P

AOT8N50/AOTF8N50500V, 8A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.2. Size:349K  aosemi
 aotf8n80.pdf

AOTF8T50P AOTF8T50P

AOT8N80/AOTF8N80800V, 7.4A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOT8N80 & AOTF8N80 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.3. Size:441K  aosemi
 aotf8n60.pdf

AOTF8T50P AOTF8T50P

AOT8N60/AOTF8N60600V,8A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT8N60 & AOTF8N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.4. Size:593K  aosemi
 aotf8b65mq1.pdf

AOTF8T50P AOTF8T50P

AOTF8B65MQ1TM 650V, 8A AlphaIGBTWith Soft and Fast Recovery Anti-Parallel DiodeGeneral Description Product SummaryVCE Latest AlphaIGBT (IGBT) technology 650V 650V breakdown voltageIC (TC=100 8AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 1.8VC) Low VCE(sat) and Vf Low turn-off switching loss and softness High effective tu

 9.5. Size:276K  aosemi
 aot8n50 aotf8n50.pdf

AOTF8T50P AOTF8T50P

AOT8N50/AOTF8N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.6. Size:154K  aosemi
 aotf8n65.pdf

AOTF8T50P AOTF8T50P

AOT8N65/AOTF8N65650V, 8A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT8N65 & AOTF8N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.7. Size:252K  inchange semiconductor
 aotf8n50.pdf

AOTF8T50P AOTF8T50P

isc N-Channel MOSFET Transistor AOTF8N50FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.8. Size:206K  inchange semiconductor
 aotf8n80.pdf

AOTF8T50P AOTF8T50P

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF8N80FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

 9.9. Size:252K  inchange semiconductor
 aotf8n60.pdf

AOTF8T50P AOTF8T50P

isc N-Channel MOSFET Transistor AOTF8N60FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.10. Size:252K  inchange semiconductor
 aotf8n65.pdf

AOTF8T50P AOTF8T50P

isc N-Channel MOSFET Transistor AOTF8N65FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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